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Iron garnet film on transparent substrate Gd3Ga5O12 immersed in phosphoric acid was etched by the irradiation of an Ar ion laser beam. Localized etching of the film occurred in the irradiated region, and the etching terminated when the thickness of the film became zero. Laser etching is expected to be an useful fabrication technique for garnet devices.
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Ando et al. (1982) studied this question.
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