The Effects of Mn-doping and Electrode Material on the Resistive Switching Characteristics of ZnOxS1-xThin Films on Plastic

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of ZnOₓS₁₋ₓ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/ ZnOₓS₁₋ₓ /Au and Al/ ZnOₓS₁₋ₓ /Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the ZnOₓS₁₋ₓ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/ ZnOₓS₁₋ₓ /Cu device, the ratio of the HRS to LRS is above 10⁶ , and the memory characteristics are maintained for 10⁴ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.