Use of charge pumping forcharacterising interface traps duringthermal annealing of irradiated powerVDMOSFETs

A recently proposed charge pumping technique for characterising the Si/SiO2 interface in power MOSFETs is applied to investigating the interface-trap behaviour during the thermal annealing of γ-ray irradiated power VDMOSFETs. A comparison with results obtained by the midgap technique shows good qualitative agreement between the two techniques. Quantitative differences observed are discussed in detail, as well as the advantages and limitations of charge pumping application in power MOSFETs.