The photocurrent and photoconductive decay of the bottom-gate zinc oxide thin-film transistors (ZnO TFTs) under ultraviolet (UV) light irradiation were investigated. A light-shield was formed on the TFTs to generate photoexcited carriers in a limited portion of the channel. It was found that the UV-light irradiated portion in the channel influenced not only the photocurrent but also the photoconductive decay of the ZnO TFTs. On the basis of the experimental and device simulation results, it is safe to say that the positive charges accumulated near the source region play a key role in determining both the photocurrent and photoconductive decay of the ZnO TFTs.
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Furuta et al. (2011) studied this question.
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