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Negative luminescence (NL) at λ max =3.8 µm from reverse-biased p -InAsSbP/ n -InAs diode heterostructures has been studied at temperatures of 70–180°C. The NL power increases with temperature and exceeds the power of direct-bias electroluminescence at temperatures over 110°C. An NL power of 5 mW/cm 2 , efficiency of 60%, and a conversion efficiency of 25 mW/(A cm 2 ) have been obtained at 160°C.
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Aidaraliev et al. (2001) studied this question.
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