Crystalline silicon carbide (SiC) fiber was produced by a new, simple procedure. Activated carbon fiber (ACF) was reacted with gaseous silicon monoxide and was converted to SiC fiber at elevated temperature and reduced pressure. The reaction was completed at temperatures as low as 1473 K. The reacted fiber consisted of submicrometer particles which were not observed in the original ACF. The SiC crystal size in the reacted fiber was approximately 30 nm. The microstructure of the fiber became dense after it was heat‐treated in air at 1573 K or in nitrogen gas at 1873 K.
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Okada et al. (1994) studied this question.
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