Improved field‐induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control

Abstract (Pb0.97L0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thick films with (100) and (110) orientation were fabricated on platinum and LaNiO3‐buffered silicon substrates through a modified sol–gel process. It was demonstrated that the PLZT thick films with (110) preferred orientation had an enhanced electric‐field‐induced strain, by 77% as compared to the films with (100) orientation. Also, the antiferroelectric–ferroelectric switching field for the PLZT thick films with (110) orientation was 200 kV/cm, which was much lower than that (256 kV/cm) of the (100) oriented films. Moreover, the fatigue behavior of the PLZT thick films on LaNiO3 electrodes was much better than that of the films on platinum electrodes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)