Hydrogen as a shallow center in semiconductors and oxides

We describe the physics of interstitial hydrogen in semiconductors and oxides based on a first‐principles computational approach. In most semiconductors hydrogen acts as an amphoteric impurity, compensating the prevailing conductivity. In ZnO, however, hydrogen acts a shallow donor. We have developed a general model for the behavior of hydrogen in semiconductors and oxides, and confirmed its predictive nature in the case of InN and GaAsN alloys.