Measurements are reported for the magnetoresistance of Ge_1-x{Au}ₓ$ thin film samples, which are known from previous measurements to exhibit variable-range-hopping conductivity. Films with 0.075x0.138 were studied in magnetic fields from 0 to 4.0 Tesla and in the temperature range 10 to 1.2 K. Magnetoresistance of both positive and negative signs was observed. At a fixed magnetic field, the form of the dependence of resistance upon temperature, for both Mott(T^-1/4) and Shklovskii(T^-1/2) types of variable-range-hopping conduction samples, was found to be unaffected by the presence of magnetic fields in the range studied. A simple ansatz for the hopping exponent in the case of a magnetic field is presented, combined with optimized hopping conduction theory as developed by Mott, which is shown to explain the present data in a natural way.
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Wang et al. (1995) studied this question.
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