Effect of interfacial coupling on photocatalytic performance of large scale MoS2/TiO2 hetero-thin films

Interface electronic behavior of two-dimensional large scale MoS2/TiO2 hetero-thin films has been studied using photoemission spectroscopy. We show a clear experimental evidence for type II band alignment and upward band bending (∼0.55 eV) at the interface of this system. The valence band offset at monolayer MoS2/TiO2 interface was measured to be 2.15 eV, while the conduction band offset was 1.00 eV. The unique interface band positions introduce a strong build-in electric field for efficient electron-hole separation. In addition, thermal treatment results in better interfacial coupling and charge separation efficiency thus enhanced visible light photoactivity. Our results explicate the mechanism and emphasize its huge potential in visible light photocatalysis.