Operation of the Si/CoSi2/Si heterostructure transistor

A two-current path model is presented to describe the operation of the Si/CoSi2/Si epitaxial, heterostructure transistor. The model gives a good account of the device behavior and allows us to conclude that it works by activated charge control, in a formal sense like a bipolar transistor. The analysis further suggests that with the fine base dimensions made possible by the single crystal, vertical structure one can foresee devices with β’s of a 100 or more, at the same time maintaining a transconductance close to the optimal value 0.04 mhos/mA characteristic of a charge injection device.