We show that by a proper design and modulation of the composition of a ternary InGaAs quantum well one can considerably alter the optical properties of the system. We demonstrate a novel InGaAs/InP strained-layer heterostructure in which a blue Stark shift of the absorption edge of more than 10 meV is achieved. This blue shift, together with a field-enhanced room-temperature excitonic effect, has applications to bistable electro-optic devices.
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Gershoni et al. (1990) studied this question.
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