Dispersion engineered Ge_115As_24Se_645 nanowires with a nonlinear parameter of 136W^-1m^-1 at 1550nm

We have fabricated 630 × 500 nm nanowires from Ge(11.5)As(24)Se(64.5) chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6 dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7 W(-1)m(-1) at 1550 nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18 mm long nanowire pumped by 1 ps pulses with peak power of 25 W.