Answers are grounded in this paper and cite their sources.
The nature of the defects present at various Ge/GeO2 interfaces has been investigated by means of electrically detected magnetic resonance (EDMR) spectroscopy. GeO2 thin films were grown by atomic oxygen, ozone, and molecular oxygen exposure. The defect microstructure is sensitive to the oxidizing species, i.e., to the oxidation mechanism. Different EDMR spectra are correlated with the specific electrical response of the corresponding Ge/GeO2 metal-oxide-semiconductor structures.
No takes yet. Share an insight, caveat, or question.
Baldovino et al. (2010) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: