Theoretical and experimental studies of the photoemission current from GaAs(110)

We report calculations of photoemission spectra including final-state effects for normal emission from GaAs(110) and compare the results with measurements. In the calculations we consider the matrix elements between initial tight-binding and final pseudopotential wave functions. All peaks of the experimental energy-distribution curves can be explained in the direct-transition model using structure plots, except one transition, which is explained by a surface state. Experimental and theoretical spectra compare well concerning energy position and intensity.