Room-temperature ferromagnetism has been induced within ZnO single crystals by implant doping with Fe ions. For an implantation temperature of 623 K and an ion fluence of 4×1016cm−2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron x-ray diffraction and Mössbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4×1015cm−2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor.
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Potzger et al. (2006) studied this question.
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