A simulation study is presented using a new version of the simulation program ADEPT (advanced simulation of dry-etching process technology), which is a subset of the process simulator COMPOSITE. Based on some aspects of plasma physics, a model was developed that allows for the calculation of important properties of a collisional sheath by Monte Carlo methods. These properties have great influence on the anisotropy of dry-etch processes. Angle/energy spectra of ions and fast neutrals can be gained from the model and can be used as input data for profile simulation. A simulation study is presented showing several profile phenomena. A short discussion is included on sidewall protection by polymer deposition, and on surface diffusion.
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Pelka et al. (1989) studied this question.