We fabricated three types of transparent conductive In–Zn–O:H/In–O:H multilayer film with amorphous/amorphous (a-/a-), amorphous/polycrystalline (a-/poly-), and polycrystalline/polycrystalline (poly-/poly-) interfaces, and investigated the effects of the interface structures on their transport properties. The amorphous multilayer films were fabricated by a sputtering method, and the other films were fabricated by post-annealing of the amorphous multilayer films, utilizing the difference in crystallization temperature for the constituent layers. The characterization of the transport properties of these films revealed that the a-/poly- interface as well as the a-/a- interface does not scatter free electrons significantly, and bilayer transparent conductive oxide films consisting of a-/poly- and a-/a- structures show superior transport properties compared with those consisting of the poly-/poly- structure. We applied the poly-In–O:H/a-In–Zn–O:H bilayer film as a front electrode of a hydrogenated microcrystalline Si thin-film solar cell and confirmed its usefulness in the solar cell.
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Koida et al. (2014) studied this question.
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