The effects of AlO x formation on the emission properties of AlN/GaN heterostructures are comparatively investigated using steady-state and time-resolved photoluminescence (PL) measurements. By analyzing the excitation power and temperature-dependent PL spectra, PL at around 3.45–3.46 eV is attributed to the two-dimensional electron-gas (2DEG)-related emission. Simultaneous changes in the emission energies and lifetimes are observed by forming a crystallized AlO x layer. The results demonstrate a possibility of controlling the surface states by changing the surface oxide structure.
No takes yet. Share an insight, caveat, or question.
Onuma et al. (2015) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: