An Aqueous Phase Electro‐Reduction of CO 2 Over Surface Oxygen Vacancy on Indium Doped SnO 2‐x (110) and (101) Nanoflake Interfaces

SnO 2 nanosheet CO 2 reduction efficiency has been increased by indium doping on SnO 2 surface. It has been investigated that a certain amount of indium doping over tin oxide surface would create oxygen vacancy on the surface, which are the most active sites of the CO 2 reduction reaction and these oxygen vacancies also increase the selectivity toward formate production. 55 mA/cm 2 current density has been achieved at a potential of 1.15 V (vs. RHE). 81% faradaic efficiency toward CO 2 reduction to formate has been achieved. Indium‐doped tin oxide nanoflakes has been observed outstanding selectivity toward HCOO* formation. Indium was doped on the surface oxygen site thus created those oxygen vacancies which promote developed performance in electrochemical reaction.