We prepared Si(100) surfaces with anomalous atomic double-layer steps grown via chemical vapor deposition. Scanning tunneling microscopy resolved DA-type steps, supported by low-energy electron diffraction, Fourier-transform infrared spectroscopy, and in situ reflection anisotropy spectroscopy, which enabled direct control of majority domain formation. We attribute the energetically unfavorable step structure to interaction of the surface with the H₂ ambient, driving a dynamic step formation process governed by surface vacancy generation, diffusion, and annihilation at step edges.
No takes yet. Share an insight, caveat, or question.
Brückner et al. (2012) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: