A classical model describing the kinetics of trapping and recombination of carriers in insulating and semiconducting solids is considered. For the model some exact formula for thermally stimulated conductivity (TSC) are derived. It is shown that the area under the TSC curve calculated for one type of recombination centre depends only on the ratio of the number of carriers which remain in thermally disconnected traps. Using this formula the authors demonstrate that by performing a series of simultaneous TSC/TL (thermoluminescence) experiments it is possible to estimate the relative density of the carriers remaining in deep traps. The basic formulae derived here are independent of the heating programme so they are also valid for the isothermal decay current IDC method.
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Mandowski et al. (1992) studied this question.
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