ZnO nanorods were implanted with Ga+ ions in a combined scanning-electron-microscope/focused-ion-beam system with doses from 1011to1017cm−2. Electrical resistance measurements performed on single ZnO nanorods yield first an increase of the resistance due to defect formation which lowers the electron mobility. Implantation doses exceeding 1015cm−2 yield a strong decrease of the resistance to values significantly below the resistance before Ga+-ion implantation. Low specific resistivities of about 3×10−3Ωcm are reached without additional annealing treatment after high-dose implantation.
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Weissenberger et al. (2007) studied this question.