p‐type conducting ZnO:P microwires prepared by direct carbothermal growth

Phosphorous‐doped (ZnO:P) and undoped ZnO wires with diameter of several micrometers and length of several hundred micrometers were thermally grown directly on phosphorus pentoxide doped and undoped ZnO:graphite targets, respectively. The cathodoluminescence spectra of single ZnO:P microwires show three typical acceptor‐related emissions which are attributed to (A0, X), (e, A0), and DAP. Three‐terminal, gate voltage dependent electrical measurements of back‐gate field effect transistors with the microwires as channels indicate reproducibly that undoped ZnO and ZnO:P microwires are n‐type and p‐type conductive, respectively. The p‐type conductivity was found to be stable over more than six months. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)