We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from -270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries.
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Jankowski et al. (2011) studied this question.
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