Electrical characterization of carbon nanotube field-effect transistors with SiNx passivation films deposited by catalytic chemical vapor deposition

SiN x passivation films were deposited on carbon nanotube field-effect transistors (CNTFETs) by catalytic chemical vapor deposition (Cat-CVD) at low substrate temperatures. Deposition at 330°C induced many defects in the CNT channels. The measurement of electrical properties revealed that p-type CNTFETs were converted to n-type CNTFETs after deposition at 270°C. Air-stable p-type top-gated CNTFETs with SiNx passivation films deposited at 65°C were operated. Thus, Cat-CVD is highly suitable for depositing high-quality SiNx passivation films on CNTFETs and the fabrication of n- or p-type CNTFETs can be controlled by changing the deposition temperature of SiNx passivation films.