General transport theory of noise in p–n junction-like devices. III. Junction noise in p+–n diodes at high injection

The noise in diodes is considered at high injection for an arbitrary geometry, and for the most general Shockley-Read type generation–recombination noise source. The Green's function technique of an earlier paper [3] is used. By algebraic manipulation of the basic-response-type hole density spectra, results are obtained which can be expressed in the network parameters Yj (junction admittance), Zj (junction impedance), and I0 (steady state current) without calculation of these parameters. Only part of the noise, the so-called Shockley-Read excess, requires explicit computation. For a long diode the results are in agreement with previous one-dimensional results [4]. The total noise is expressible in network parameters in this case via a simple expression. For a short diode, as well as for other geometries, the Shockley-Read excess is modified, but the total noise is not drastically affected.