Strategies for improving the sensitivity of FIB‐SIMS

Secondary ion yields need to be enhanced to provide higher sensitivity in the SIMS technique in order to meet the demands for high performance in surface analysis of ever‐decreasing analytical volumes. In this work, we investigated how the ionization probability could be improved by changing the surface chemistry prior to analysis by oxygen implantation and flooding. The ion‐induced altered layer was analyzed with the FIB‐SIMS and oxygen flooding was carried with the ION‐TOF IV.