Organometallic chemical vapor deposition of ZnO on sapphire, using the reaction of diethylzinc with H 2 O / H 2 , N 2 O / N 2 , and CO 2 / H 2 oxidizing gas systems, has been studied. Epitaxial films have been achieved at temperatures of 400° and 730°C, respectively, in the first two systems. The films have been characterized using scanning electron microscopy (SEM), reflection electron diffraction (RED), and surface acoustic wave techniques.
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Lau et al. (1980) studied this question.