Depth scale distortions in shallow implant secondary ion mass spectrometry profiles

Secondary ion mass spectrometry analysis of ultrashallow boron implants is typically performed using sub-keV O2+ primary ion beams, either at normal or oblique (with O2 leak) incidence bombardment. This article investigates the distortion of depth profiles which may be due to sputter rate changes near the surface or primary ion beam induced mixing/roughening under the primary ion bombardment conditions mentioned above.