The epitaxial growth of CaO films on mechanical-damage-free MgO(001) surface using low-temperature buffer technique has been carefully investigated. The strain is effectively relaxed in the CaO∕MgO interfacial layers by lattice distortion and misfit dislocations as confirmed by transmission electron microscopy, which facilitates the subsequent growth of smooth CaO film at high temperature. The strain relaxation mechanism of the heterointerface is discussed in detail.
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Li et al. (2007) studied this question.
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