Far infrared (FIR) absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20–200 μm and compared with the calculated results. Both Be (in the range 3×1018–2.6×1019 cm−3) and C (1.8×1018–4.7×1019 cm−3)-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors.
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Korotkov et al. (2001) studied this question.
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