Based on our original idea about monolithic integration of the superluminescent diode (SLD) with a semiconductor optical amplifier (SOA), the axis of the current injection area was tilted. High superluminescent power (more than 200 mW) at 1.5 µm was obtained by optimizing the tilted device structure. No lasing mode was discovered within the range of measurement. In addition, it was discovered that the tilted integrated device had the function of lasing suppression, to some extent.
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Liu et al. (2001) studied this question.
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