Electrical Conduction in Amorphous Cu10As40Se50 with Potential Fluctuations

Hall measurements of amorphous and annealed Cu10As40Se50 samples are performed to evaluate the carrier density and to evaluate the mobility in the temperature range 300 to 580 K. It is found that the free hole density pf, the Fermi level, and the mobility is a function of the annealing processes. The data are interpreted using the potential fluctuation theory. Differential thermal analysis (DTA) is performed. The endothermic changes of DTA have been attributed, in fact, to the shrinkage of the maximum height of the potential hills with temperature; while the exothermic changes have been regarded as a reason of the reduction of the disorder energy with annealing.