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We report measurements of the magnetization of insulating phosphorus-doped silicon for fields up to 50 kG and temperatures down to 1.25 K, for dopant concentrations N=6.7×{}10¹⁷ to 2.8×{}10¹⁸ cm^-3. The data are found to be in quantitative agreement with a generalization, to finite fields, of a scaling calculation of the magnetic properties of the insulating phase, and support a model of hierarchically coupled spin pairs.
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Sarachik et al. (1986) studied this question.
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