Non‐destructive depth profiling through quantitative analysis of surface electron spectra

A theory is presented that allows detailed quantitative information on in‐depth concentration profiles to be extracted through analysis of surface electron spectra. The depth profile is determined from analysis of a single spectrum and the method is therefore fast and non‐destructive. The validity of the method is tested through anlaysis of model spectra from a wide variety of inhomogeneous systems. It is demonstrated that the method can clearly distinguish between different classes of in‐depth profiles. Moreover, the formalism can be used to distinguish between different overlayer growth mechanisms. The resolution in the determination of the detailed concentration depth profile is of the order of the inelastic mean free path λ. The accuracy of the total amount of material within depths of 4–6 λ determined by the analysis is, in all cases, better than 10–15%.