Formulae are given for the relaxation time of scattering on short‐range potential centres associated with ionized and neutral defects in n‐type InSb. The effect of pressure on the partial resistivity associated with this mechanism of scattering and, also for this mechanism, the scattering parameter r' which is used in describing thermomagnetic effects are calculated. The results obtained confirm the suggestions of a previous paper [1] concerning the contribution of short‐range potentials to the scattering in heavily doped n‐type TnSb.
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Litwin‐Staszewska et al. (1971) studied this question.
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