An investigation of correlation between transport characteristics and trap states in n-channel organic field-effect transistors

Transport characteristics in n-channel organic field-effect transistors are discussed on the basis of density of states (DOS) for trap states determined with multiple trap and release model. First the trap-free intrinsic mobilities, the activation energies, and total effective DOS for conduction band are determined with the effective field-effect mobility versus temperature plots and total DOS of trap states. Second the general formula for subthreshold swing S applicable to organic field-effect transistors is derived and the surface potentials are determined from the S determined from the transfer curves and the DOS for the trap states according to the general formula.