Achieving ferromagnetic insulating properties in La 0.9 Ba 0.1 MnO 3 thin films through nanoengineering

of 188 K). This is the first time that a combined strain + doping method is used in a VAN system to realise exemplary properties which cannot be realised in plain films. This work represents an important step in engineering high performance spintronic and multiferroic thin film devices.