GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer, Kuo, Cheng-Huang, Chang, Shoou-Jinn, Su, Yan-Kuin, Wu, Liang-Wen, Chen, Jone F., Sheu, Jinn-Kong, Tsai, Ji-Ming
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Kuo et al. (2003) studied this question.