Answers are grounded in this paper and cite their sources.
Magnetotransport behavior of two-dimensional X-band electrons created in modulation-doped very thin (25--75 {}) AlAs quantum wells was studied. Effective-mass analysis based on temperature-dependent magnetoresistances clearly showed X_z-{X}xy$ crossover at an AlAs thickness of about 45 {}. This value is much smaller than that in an AlAs/GaAs type-II superlattice (60 {}). Origins of this difference were discussed in terms of the effect of doping and degeneracy change and of the change of strain due to the structure difference.
No takes yet. Share an insight, caveat, or question.
Maezawa et al. (1994) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: