MIS diodes on n-InP with tantalum oxide interfacial layer grown by rapid thermal oxidation of tantalum

The electrical properties of MIS InP diodes where the interfacial layer is prepared by electron beam evaporation of Ta and subsequent rapid thermal oxidation of evaporated Ta film are studied. Ta and Al are used as the gate metals. Compared with the case of no interfacial film between metal and InP, the barrier height increases by 0.22 and 0.12 eV for Ta and Al gate metals, respectively. The MIS diode with Ta gate metal shows good thermal stability. In the case of Al gate metal the thermal stability is poor.