Annealing behavior of Si implanted InP

Rapid thermal annealing with a lamp furnace and conventional furnace annealing have been applied to InP 〈100〉 implanted with Si ions of 40 and 350 keV and doses of 1013–1015 cm−2. After examination of different capping layers, phosphorus silica glass was chosen. Sheet carrier concentration, Hall mobility, and carrier-concentration depth profiles were measured. A time of 10 s at 800 °C is sufficient to activate the dopants. Rutherford backscattering channeling measurements show the damage and the recrystallization due to different annealing procedures. To optimize the annealing of the damage, a relatively long time for the heat treatment is necessary which, however, results in enhanced diffusion of the dopants.