High‐Speed Epitaxial Growth of β‐ SiC Film on Si (111) Single Crystal by Laser Chemical Vapor Deposition

(111)‐oriented β‐ SiC film was prepared on Si (111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The β‐ SiC film grew epitaxially on the Si (111) substrate with in‐plane orientation relationship of SiC [ ]// Si [ ] and SiC [ ]// Si [ ]. The deposition rate of the β‐ SiC film was 40 μm/h, 10 times higher than that of conventional CVD .