In this letter, we propose a new trench-gate power MOSFET with buried oxide in its drift region that shows an improvement in the breakdown performance as compared to the conventional trench device due to a reduction in the vertical electric field. In addition, the proposed device shows about linear relation between the BV andRONas compared to the 2.5th power relation in the conventional device.
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Saxena et al. (2009) studied this question.
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