We report the first measurement of the gas-to-solid phase transition of hydrogen occluded in amorphous silicon. The transition is very broad and occurs around 30 K confirming the nonuniform and highly compressed nature of hydrogen. The infrared-absorption spectra of the solid phase show that the H₂ structure is strained with considerable interaction between the H₂ and the Si walls of the microvoids.
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Chabal et al. (1984) studied this question.
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