Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes

Etch-induced damage in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) caused by a Cl 2 -base plasma and its recovery by means of a N 2 -plasma and annealing process of n -GaN is described. The photoluminescence intensity of etched n -type GaN was decreased by several orders of magnitude due to etch-induced damage, giving rise to an increase in the leakage current in LED current–voltage curves. However, treatment of the LEDs with a N 2 plasma along with a rapid thermal annealing process led to an enhancement in the I – V characteristics of the LEDs due to the suppression of the leakage current. The electroluminescence intensity of LEDs which was etched at dc bias of −200 V was also improved by a factor of two relative to the as-etched LEDs, as a result of this treatment.