We have investigated the 1.46 eV deep emission band observed in the photoluminescence (PL) spectra of 100-Å-thick GaAs/Ga0.52In0.48P single quantum wells grown by metal-organic vapor-phase epitaxy. We have found that the application of GaP layers at both lower and upper GaAs/Ga0.52In0.48P interface is necessary to achieve 1.52 eV emission from the well; otherwise only the deep emission band at 1.46 eV is observed in the 77 K PL spectrum. Time-resolved PL and temperature-dependent PL measurements show that the 1.46 eV deep emission is due to recombination of electrons in the conduction band of Ga0.52In0.48P and holes bound to acceptors in GaAs at the GaAs/Ga0.52In0.48P interface, which forms type-II band alignment. We propose that the application of GaP layers modifies the band alignment from type II to type I, and makes the emission from the well observable.
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Uchida et al. (1997) studied this question.
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