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We present the calculated results for the qualitative and quantitative analysis of the intersubband resonance absorption enhanced by the insulator-semiconductor interfacial irregularities in a metal-insulator-semiconductor system. It shows that the spectral profiles depend strongly on the electronic population distributions of the two subbands involved. The model calculations of the far-infrared spectra are compared with the existing experimental data on Ge(111), InSb, and the grating-enhanced spectrum of Si.
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Nee et al. (1984) studied this question.
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