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Donor-acceptor twins in silicon can exist only in zones where the electric field exceeds a critical value. This hypothesis removes some anomalies in the description of current-voltage characteristics of almost ideal silicon p-n junctions. The critical field seems to depend upon the final anneal temperature—about 2×104 V/cm for an anneal at 950 °C and of the order of 4×103 V/cm for anneals at 800 and 650 °C.
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Cerofolini et al. (1985) studied this question.
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